Offering a very linear power amplifier pallet with original Freescale MRF6VP3450

  

MRF6VP3450H MRFE6V3450HR5 Description: 450W CW , 50V , 860MHz , RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs. RF Power Field Effect Transistors. Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment. Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA. Pout = 90 Watts Avg. F = 860 MHz, 8K Mode, 64 QAM.

Power Gain ó 22.5 dB. Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA. Pout = 450 Watts PEP, f = 470-860 MHz. Power Gain ó 22 dB. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth).

Characterized with Series Equivalent Large-Signal Impedance Parameters. Internally Input Matched for Ease of Use. Qualified Up to a Maximum of 50 VDD Operation.

Greater Negative Gate-Source Voltage Range for Improved Class C Operation. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Maker:FREESCALE [Freescale Semiconductor, Inc].

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