Equipped with radiator, copper material, scarce items. If you need a data package, you can check it on the official website of NXP. I increased the unit price by 30 US dollars.
This is a pallet with RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent rugg 1.2 Features and benefits Excellent ruggedness VSWR? 40 : 1 through all phases Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band.
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This item is in the category "Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors". The seller is "xihu888" and is located in this country: CN. This item can be shipped worldwide.