1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent rugg 1.2 Features and benefits Excellent ruggedness (VSWR? 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band.
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