RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET. Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg. T cover items that have been abused, burned and damaged in any form. This includes packaging, inserts, manuals etc. We will reply you ASAP. The item "POWER AMPLIFIER BOARD for Power LDMOS MRF6VP2600H 600W 500MHz Built-in radiator" is in sale since Wednesday, July 29, 2020.This item is in the category "Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors". The seller is "xihu888" and is located in , . This item can be shipped worldwide.